Technology Overview

Short Wavelength Technologies

Exploring the science and engineering behind UV and blue light sources

Semiconductor Light Sources

Short wavelength light emitting diodes (LEDs) and laser diodes are based on wide bandgap semiconductor materials, primarily Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN). These materials enable emission across the ultraviolet and blue spectral regions.

The development of high-efficiency UV LEDs has revolutionized many applications previously dependent on mercury vapor lamps, offering advantages in energy efficiency, instant-on operation, and environmental safety.

Key Specifications

UV-C Range 200-280 nm
UV-B Range 280-315 nm
UV-A Range 315-400 nm
Blue Range 400-495 nm

Technology Categories

Substrate (Sapphire/SiC)
n-GaN Layer
Active Region (MQW)
p-GaN Layer
Metal Contact

UV LED Technology

UV LEDs utilize AlGaN/GaN heterostructures to generate ultraviolet light. The aluminum content in the active layer determines the emission wavelength - higher aluminum content produces shorter wavelengths in the UV-C range.

Key Advantages

  • Mercury-free operation (RoHS compliant)
  • Instant on/off switching capability
  • Compact form factor for integrated designs
  • Long operational lifetime (50,000+ hours)
  • Precise wavelength control

Learn more about UV LED Technology →

Optical Cavity

Blue Laser Diodes

GaN-based laser diodes produce coherent blue light at wavelengths of 405nm, 445nm, and 450nm. These devices are critical for optical data storage, projection displays, and industrial materials processing.

Applications

  • Blu-ray disc read/write systems
  • Laser projectors and displays
  • Industrial cutting and engraving
  • Scientific instrumentation
  • Biomedical diagnostics

Learn more about Blue Laser Technology →

Materials Science

GaN (Gallium Nitride)

Wide bandgap semiconductor (3.4 eV) forming the foundation for blue LEDs and lasers. High thermal conductivity and chemical stability.

Emission: 365-450 nm

AlGaN (Aluminum Gallium Nitride)

Alloy system with tunable bandgap (3.4-6.2 eV) based on aluminum content. Essential for UV-A, UV-B, and UV-C LED development.

Emission: 210-365 nm

AlN (Aluminum Nitride)

Ultra-wide bandgap material (6.2 eV) for deep UV applications. Highest thermal conductivity among III-nitrides.

Emission: <210 nm