UV LED Technology
AlGaN-based light emitting diodes for deep ultraviolet applications
Deep UV Semiconductor Light Sources
Aluminum Gallium Nitride (AlGaN) based ultraviolet light emitting diodes represent a transformative technology enabling compact, mercury-free UV light sources. By adjusting the aluminum composition in the active region, emission wavelengths can be tuned from 210nm to 365nm, covering the entire UV-A, UV-B, and UV-C spectral ranges.
UV-C LEDs emitting at 260-280nm are particularly significant for disinfection applications, as this wavelength range corresponds to peak DNA absorption. The COVID-19 pandemic accelerated commercialization of UV-C LED systems for air and surface sterilization.
UV Spectral Regions
Device Structure & Materials
AlGaN Heterostructures
Deep UV LEDs utilize high aluminum content AlGaN alloys for both the active region and cladding layers. The aluminum composition determines the bandgap energy and thus emission wavelength according to Vegard's law, with higher Al content producing shorter wavelengths.
Critical Design Aspects
- Al composition 50-100% for UV-C emission
- AlN substrates for reduced defect density
- Multiple quantum well active region (3-5 wells)
- Electron blocking layer to prevent carrier leakage
- Transparent contact layers for light extraction
- Surface texturing and encapsulation for efficiency
External Quantum Efficiency Challenges
UV-C LED efficiency remains significantly lower than visible LEDs due to fundamental materials challenges. Current state-of-the-art devices achieve 10-20% wall-plug efficiency, compared to 60-80% for blue LEDs.
Low p-type Conductivity
High Mg acceptor activation energy in high-Al AlGaN limits hole concentration. Room temperature hole density <10^17 cm^-3 causes high series resistance and current crowding.
Poor Light Extraction
High refractive index contrast (n≈2.5) leads to total internal reflection. Only 4-8% of photons escape without surface texturing or photonic crystal structures.
Threading Dislocations
Lattice mismatch between AlN and sapphire substrates creates threading dislocation densities >10^9 cm^-2, acting as non-radiative recombination centers.
Transparent Contacts
Conventional metal contacts absorb UV-C light. Transparent conductive oxides and tunnel junctions are required but challenging to implement with low resistance.
Applications & Markets
Disinfection & Sterilization
260-280 nm UV-CUV-C LEDs at 265-275nm provide peak germicidal effectiveness by damaging DNA/RNA of bacteria, viruses, and pathogens. Applications include water purification, air sterilization, and surface disinfection in healthcare and consumer products.
UV Curing
365-395 nm UV-AUV-A LEDs polymerize photoreactive resins and inks for printing, coatings, and adhesives. High-power LED arrays (>10W) enable rapid curing with precise spatial and temporal control, eliminating mercury lamp hazards.
Chemical Sensing
240-280 nm UV-CUV absorption spectroscopy at 254nm enables detection of aromatics, nitrates, and organic compounds in water quality monitoring and process control. LED-based sensors offer portable, real-time analysis capability.
Medical Therapy
295-315 nm UV-BNarrow-band UV-B (311nm) phototherapy treats psoriasis, vitiligo, and eczema. LED systems provide targeted treatment with precise dose control and reduced erythema compared to broadband UV sources.
Forensics & Detection
365-395 nm UV-AUV-A excites fluorescence of biological fluids, document security features, and mineral samples. Portable LED flashlights enable field investigation and authentication of currency, IDs, and artwork.
Horticulture
UV-A + UV-BSupplemental UV lighting enhances secondary metabolite production, improves plant immunity, and regulates morphology. LED grow lights incorporate UV-A (380-400nm) for quality enhancement in controlled agriculture.
Research & Development
AlN Substrate Technology
Bulk AlN substrates grown by physical vapor transport (PVT) reduce threading dislocation density by 2-3 orders of magnitude compared to sapphire. Single-crystal AlN enables >50% improvement in UV-C LED efficiency.
Tunnel Junction Integration
Heavily-doped GaN/AlGaN tunnel junctions enable transparent p-contact by current flow through n-type layer. Eliminates UV absorption by metal p-contacts, improving light extraction by 50-100%.
Photonic Crystal LEDs
Nanopatterned photonic crystal structures on LED surface reduce total internal reflection and enhance light extraction. 2D photonic lattices improve extraction efficiency from 8% to 20-30% for UV-C devices.
Quantum Well Optimization
Polarization engineering through quantum well design modifies valence band structure to enhance transverse electric (TE) mode emission. Improves light extraction in flip-chip geometry by 2x.
High-Power Arrays
Development of >1W/mm² power density UV-C LED arrays requires advanced thermal management including diamond heat spreaders and microchannel cooling for industrial-scale disinfection systems.
Alternative Buffer Layers
Compositionally-graded AlGaN buffer layers and superlattice structures reduce strain and defect propagation from substrate. Enables growth on cost-effective sapphire with improved material quality.
Market Outlook
The UV LED market is experiencing rapid growth driven by disinfection applications, regulatory phase-out of mercury lamps, and cost reductions from manufacturing scale-up. UV-C LEDs represent the fastest-growing segment with 40%+ annual growth.
Key market drivers include water/air purification demand, adoption in consumer electronics (smartphone sterilizers), and automotive interior disinfection systems. Industrial UV curing remains the largest application segment by revenue.
Explore Blue Laser Technology
Learn about GaN-based semiconductor lasers for optical storage and displays.
View Blue Lasers